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Faculty of Natural Sciences and Mathematics
Institute for Physics
Faculty of Natural Sciences and Mathematics, Institute of Physics: Journal Articles
Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si
Details
Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si
Journal
Solid-State Electronics
Date Issued
2002-11
Author(s)
Atanassova, E
Paskaleva, A
Pecovska-Gjorgjevich, M
DOI
https://doi.org/10.1016/S0038-1101(02)00134-X