Repository logo
Communities & Collections
Research Outputs
Fundings & Projects
People
Statistics
User Manual
Have you forgotten your password?
  1. Home
  2. Faculty of Natural Sciences and Mathematics
  3. Institute for Physics
  4. Faculty of Natural Sciences and Mathematics, Institute of Physics: Journal Articles
  5. Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si
Details

Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

Journal
Solid-State Electronics
Date Issued
2002-11
Author(s)
Atanassova, E
Paskaleva, A
Pecovska-Gjorgjevich, M
DOI
https://doi.org/10.1016/S0038-1101(02)00134-X

⠀

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Accessibility settings
  • Privacy policy
  • End User Agreement
  • Send Feedback
Repository logo COAR Notify