The effect of gate material on dielectric characteristics and conduction mechanism of Ta/sub 2/O/sub 5/ MOS structures
Journal
Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004.
Date Issued
2004
Author(s)
Pecovska-Gjorgievich, M.
Novkovski, N.
Atanassova, E.
Spasov, D.
DOI
DOI: 10.1109/ICSD.2004.1350570
