Repository logo
Communities & Collections
Research Outputs
Fundings & Projects
People
Statistics
User Manual
Have you forgotten your password?
  1. Home
  2. Faculty of Natural Sciences and Mathematics
  3. Institute for Physics
  4. Faculty of Natural Sciences and Mathematics, Institute of Physics: Conference papers
  5. The effect of gate material on dielectric characteristics and conduction mechanism of Ta/sub 2/O/sub 5/ MOS structures
Details

The effect of gate material on dielectric characteristics and conduction mechanism of Ta/sub 2/O/sub 5/ MOS structures

Journal
Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004.
Date Issued
2004
Author(s)
Pecovska-Gjorgievich, M.
Novkovski, N.
Atanassova, E.
Spasov, D.
DOI
DOI: 10.1109/ICSD.2004.1350570

⠀

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Accessibility settings
  • Privacy policy
  • End User Agreement
  • Send Feedback
Repository logo COAR Notify