Faculty of Natural Sciences and Mathematics
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Item type:Publication, Next-generation sequencing reveals multiple ATM gene variants in urothelial bladder cancer(Nature; European Journal of Human Genetics, 2025-05-26)Dimitar Ugrinovski, Slavica Josifovska, Kiril Pakovski ,Skender Saidi, Panov Sasho - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Математички јазик(Union of Mathematicians of Macedonia, 2023-01)Doncho Dimovski, Jasmina Markoska, Aneta Gacovska - Barandovska, Gjorgji MarkoskiТрудот се осврнува на конструктивните целини, лексиката, граматиката, карактеристиките и својствата на математичкиот јазик. Илустрирани ќе бидат сличностите и различностите со македонскиот јазик, односно говорниот јазик. Посочена е неизбежната врска на математичкиот јазик со говорниот јазик и значењето при формулација на задачите во образованието по математика. Дадени се примери на непрецизни формулации на математички задачи, како и предлози за нивно правилно формулирање. / - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The need of studying probability and statistics in High school education, as a preparation for the university courses(Union of Mathematicians of Macedonia, 2023-01)Delcho Leshkovski, Aneta Gacovska - BarandovskaIn a time of rapid technological and technical development, the areas of probability and statistics are an inevitable part of everyday life and professional work. They are widely used in the natural sciences, as well as in the technical and engineering professions, information technologies, economics and finance. The curricula of the High school education and some of the technical faculties have been reviewed and for better understanding of certain subjects studied at the technical faculties, the need of studying certain notions of probability and statistics in the High school education has been recognized. / Во време на забрзан технолошко‐технички развој, областите веројатност и статистика претставуваат неизбежен дел од секојдневието и професионалното работење. Тие имаат широка примена, како во природните науки, така и во техничките и инженерските струки, информациските технологии, економијата и финансиите. Во трудот е направен преглед на наставните програми во гимназиското средно образование и некои од техничките факултети, и согледана е потребата од изучување на одредени поими од веројатност и статистика во гимназиското образование, за полесно совладување на одредени предмети на техничките факултети. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Al2O3/HfO2 MULTILAYER STACKS FOR NONVOLATILE FLASH MEMORY IT-05 APPLICATIONS(DFRM, 2018-09)D. Spassov, A. Paskaleva, T. A. Krajewski, A. Skeparovski, E. Guziewicz, N. NovkovskiAl2O3/HfO2 multilayer stacks deposited by atomic layer deposition (ALD) have been investigated from the view point of their application in emerging charge-trapping non-volatile flash memories. Dielectric and electrical properties, charge trapping, retention and endurance characteristics have been shown to depend strongly on the thickness of Al2O3 and HfO2 sublayers as well as on the post-deposition annealing (PDA) steps. O2 and N2 PDA introduce different kinds of electrically active defects in Al2O3/HfO2 stacks. The results give convincing evidence that PDA in O2 enhances substantially electron trapping in deep traps, hence charge storage ability of stacks. RTA in N2 results in negligible memory windows for thinner samples, i.e. it is not efficient in improving the charge storage ability. Multilayered HfO2/Al2O3 stacks have a potential for implementation as charge trapping layer in non-volatile memory devices and their charge storage ability could be tailored and enhanced by optimization of stack parameters as well as annealing processes. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Interface state densities in different heterojunctions(Horia Hulubei Publishing House, 2018-09)N. Novkovski; A. Paskaleva; A. Skeparovski; D. Spassov;Interface states at the contact between the dielectric and semiconductor substrate substantially influence the characteristics of electron devices containing various metal-insulatorsemiconductor (MIS) structures. Several methods of determination of the distribution of interface states through the bandgap are used in characterization of microelectronic devices. Downscaling of dielectric stacks required for novel technologies, introduces several effects causing the standard methods to be not enough efficient. Here we pay particular attention to the Terman method, reconsidering its foundations in the case where quantum charge in silicon near the interface with dielectric has to be taken into account. In this work we attempt to describe C-V characteristics of MIS structures using analytical expression containing parameters that can be empirically extracted from the measured C-V characteristics, and thus extract interface states density distributions excluding the effect of quantum charge. Successful application of the method has been demonstrated on various MIS structures. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electron-phonon Coupling in a Class of Organic Molecules(Society of Physicists of Macedonia, 2019)Irina Petreska, Gertrud Zwicknagl - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Investigating Efficiency Aspects in 3×3 Photovoltaic Plant Using Model of Shading(University "Goce Delcev" - Stip, Faculty of Eletrical Engineering, 2021-10-19); ; - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Assessment of Operating Characteristics of Brushless DC Motor(University of Nis, Faculty of Electrical Engineering, 2019-08-26) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Euler's Number and Calculation of Compound Interest(University of Novi Sad, Technical Faculty "Mihajlo Pupin", 2018-06) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Surface springs of Lake Ohrid - Access of physico-chemical composition,(2011)B. Jordanoska, T. Stafilov, A. J. Wüest,