Interface state densities in different heterojunctions
Journal
Proceeding of the International Workshop on Advances in Nanomaterials, Magurele - Bucharest
Date Issued
2018-09
Author(s)
N. Novkovski; A. Paskaleva; A. Skeparovski; D. Spassov;
Abstract
Interface states at the contact between the dielectric and semiconductor substrate
substantially influence the characteristics of electron devices containing various metal-insulatorsemiconductor (MIS) structures. Several methods of determination of the distribution of interface states
through the bandgap are used in characterization of microelectronic devices. Downscaling of dielectric
stacks required for novel technologies, introduces several effects causing the standard methods to be
not enough efficient.
Here we pay particular attention to the Terman method, reconsidering its foundations in the case where
quantum charge in silicon near the interface with dielectric has to be taken into account.
In this work we attempt to describe C-V characteristics of MIS structures using analytical expression
containing parameters that can be empirically extracted from the measured C-V characteristics, and
thus extract interface states density distributions excluding the effect of quantum charge.
Successful application of the method has been demonstrated on various MIS structures.
substantially influence the characteristics of electron devices containing various metal-insulatorsemiconductor (MIS) structures. Several methods of determination of the distribution of interface states
through the bandgap are used in characterization of microelectronic devices. Downscaling of dielectric
stacks required for novel technologies, introduces several effects causing the standard methods to be
not enough efficient.
Here we pay particular attention to the Terman method, reconsidering its foundations in the case where
quantum charge in silicon near the interface with dielectric has to be taken into account.
In this work we attempt to describe C-V characteristics of MIS structures using analytical expression
containing parameters that can be empirically extracted from the measured C-V characteristics, and
thus extract interface states density distributions excluding the effect of quantum charge.
Successful application of the method has been demonstrated on various MIS structures.