Reduction of Interface States Stress Generation by Oxygen Annealing of ALD Nanolaminated HfO2/Al2O3 Dielectric Stacks for Charge Trapping Devices
Date Issued
2021-09-12
Author(s)
Skeparovski, A.
Novkovski, N.
Paskaleva, A.
Spassov, D.
DOI
10.1109/miel52794.2021.9569062