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http://hdl.handle.net/20.500.12188/15551| Title: | Reduction of Interface States Stress Generation by Oxygen Annealing of ALD Nanolaminated HfO2/Al2O3 Dielectric Stacks for Charge Trapping Devices | Authors: | Skeparovski, A. Novkovski, N. Paskaleva, A. Spassov, D. |
Issue Date: | 12-Sep-2021 | Publisher: | IEEE | Conference: | 2021 IEEE 32nd International Conference on Microelectronics (MIEL) | URI: | http://hdl.handle.net/20.500.12188/15551 | DOI: | 10.1109/miel52794.2021.9569062 |
| Appears in Collections: | Faculty of Natural Sciences and Mathematics: Conference papers |
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