Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12188/15551| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Skeparovski, A. | en_US |
| dc.contributor.author | Novkovski, N. | en_US |
| dc.contributor.author | Paskaleva, A. | en_US |
| dc.contributor.author | Spassov, D. | en_US |
| dc.date.accessioned | 2021-11-30T22:40:07Z | - |
| dc.date.available | 2021-11-30T22:40:07Z | - |
| dc.date.issued | 2021-09-12 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.12188/15551 | - |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.title | Reduction of Interface States Stress Generation by Oxygen Annealing of ALD Nanolaminated HfO2/Al2O3 Dielectric Stacks for Charge Trapping Devices | en_US |
| dc.type | Proceeding article | en_US |
| dc.relation.conference | 2021 IEEE 32nd International Conference on Microelectronics (MIEL) | en_US |
| dc.identifier.doi | 10.1109/miel52794.2021.9569062 | - |
| dc.identifier.url | http://xplorestaging.ieee.org/ielx7/9569024/9569026/09569062.pdf?arnumber=9569062 | - |
| item.grantfulltext | none | - |
| item.fulltext | No Fulltext | - |
| Appears in Collections: | Faculty of Natural Sciences and Mathematics: Conference papers | |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.