Repository logo
Communities & Collections
Research Outputs
Fundings & Projects
People
Statistics
User Manual
Have you forgotten your password?
  1. Home
  2. Faculty of Computer Science and Engineering
  3. Faculty of Computer Science and Engineering: Journal Articles
  4. Response to an external field of a generalized Langevin equation with stochastic resetting of the memory kernel
Details

Response to an external field of a generalized Langevin equation with stochastic resetting of the memory kernel

Journal
Physical Review E
Date Issued
2025-08-18
Author(s)
Jolakoski, Petar
Sandev, Trifce
DOI
10.1103/7q34-r45f
Abstract
We study a generalized Langevin equation framework that incorporates stochastic resetting of a truncation power-law memory kernel. The inclusion of stochastic resetting enables the emergence of resonance phenomena even in parameter regimes where conventional settings (without resetting) do not exhibit such behavior. Specifically, we explore the response of the system to an external field under three scenarios: (i) a free particle, (ii) a particle in a harmonic potential, and (iii) the effect of truncation in the memory kernel. In each case, the primary focus is on understanding how the resetting mechanism interacts with standard parameters to induce stochastic resonance. In addition, we explore the effect of resetting on the dielectric loss.

⠀

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science

  • Accessibility settings
  • Privacy policy
  • End User Agreement
  • Send Feedback
Repository logo COAR Notify