(WORLD SCIENTIFIC AND ENGINEERING ACAD AND SOC, 2007) ;
Prusi, Abdurauf
;
Arsov, Ljubomir
The formation of anodic oxide films on Nb electrodes in 1 M H2SO4 and 1 M KOH, for potential region from 0 to 90 V SCE, have been investigated. The film thickness growth, refractive indices and dielectric constants of formed films, depending of applied potential and time of anodization, have been determined using ellipsometric method. By Raman spectroscopical measurements the amorphous structure of anodic oxide films, up to 10 V SCE and progressive evolution of crystallization from 10 to 90 V has been shown. The semi-conducting properties (n or p tip semi-conductor, energy gap and flat bend potentials) has been determined using photocurrent measurements.
