Faculty of Technology and Metallurgy

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Author: search.filters.author.Prusi, Abdurauf

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    Electrochemical passivation of niobium in KOH solutions
    (CROATIAN CHEMICAL SOC, 2006-12)
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    Prusi, Abdurauf
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    Grcev, Toma
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    Arsov, Ljubomir
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    Electrochemical characterization of the passive films formed on niobium surfaces in H2SO4 solutions
    (National Library of Serbia, 2006)
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    Prusi, Abdurauf
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    Grcev, Toma
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    Arsov, Ljubomir
    The electrochemical formation and characteristics of passive films on niobium surfaces in aqueous H2SO4 solutions were studied using open circuit potential and cyclic voltammetry. In the potential region between -1.0 and 1.2 V(NHE), the cyclic voltammetry data showed that the active/passive transition involves slow metal dissolution followed by the formation of semiconducting passive oxide films. The possible electrochemical reactions and the change of the oxidation steps of some niobium oxides occurring in the passive film during the polarization are proposed. A strong influence of the natural air-formed oxide film on the chemical composition of the passive film was shown. This influence makes chemical structure of thin passive films more complicated than that of thick anodic films. It is shown that the passive films consists of more or less stable oxides, such as NbO, NbO2 and Nb2O5. The Raman spectra revealed that the thin passive films were amorphous, while the films formed at higher voltages consist, primarily, of well-crystallized Nb2O5.
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    Electrochemical formation of semi-conducting oxides for solar energy conversion
    (WORLD SCIENTIFIC AND ENGINEERING ACAD AND SOC, 2007)
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    Prusi, Abdurauf
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    Arsov, Ljubomir
    The formation of anodic oxide films on Nb electrodes in 1 M H2SO4 and 1 M KOH, for potential region from 0 to 90 V SCE, have been investigated. The film thickness growth, refractive indices and dielectric constants of formed films, depending of applied potential and time of anodization, have been determined using ellipsometric method. By Raman spectroscopical measurements the amorphous structure of anodic oxide films, up to 10 V SCE and progressive evolution of crystallization from 10 to 90 V has been shown. The semi-conducting properties (n or p tip semi-conductor, energy gap and flat bend potentials) has been determined using photocurrent measurements.
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    Barrier Properties of Anodically Formed Nb2O5
    (Faculty of Technology and Metallurgy Belgrade, Serbia and Montenegro, 2005)
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    Prusi, Abdurauf