Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12188/11508| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | A. Skeparovski; D. Spassov; A. Paskaleva; N. Novkovski | en_US |
| dc.date.accessioned | 2021-03-24T11:15:43Z | - |
| dc.date.available | 2021-03-24T11:15:43Z | - |
| dc.date.issued | 2017-12-14 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.12188/11508 | - |
| dc.description.abstract | Charge trapping properties of Al-ZrO 2 /Al 2 O 3 /ZrO 2 -SiO 2 -Si structures were investigated in attempt to elucidate the instability in their C-V hysteresis. The hysteresis in these structures is mainly due to subsequent trapping of electrons and holes injected from the Si substrate. However the competitive process of electron injection from the gate accompanied by the high leakage introduces instability and compromises the memory window. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.title | A case study of C-V hysteresis instability in metal-high-k-oxide-silicon devices with ZrO2/Al2O3/Zr2O2 stack as a charge trapping layer | en_US |
| dc.relation.conference | 2017 IEEE 30th International Conference on Microelectronics (MIEL) | en_US |
| dc.identifier.doi | DOI: 10.1109/MIEL.2017.8190073 | - |
| item.grantfulltext | none | - |
| item.fulltext | No Fulltext | - |
| Appears in Collections: | Faculty of Natural Sciences and Mathematics: Conference papers | |
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